Electrical, photo-thermal and mechanical degradation analysis of degraded single junction amorphous silicon solar modules
- Authors: Osayemwenre, Gilbert Omorodion
- Date: 2019
- Subjects: Solar cells Amorphous semiconductors Silicon
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: http://hdl.handle.net/10353/15211 , vital:40204
- Description: In this present era of sustainable energy development, photovoltaic modules which are based on amorphous silicon cells have immeasurable prospects of contributing meaningfully to the energy demand of the world at large. The global consciousness of environmental safety issues has birthed the rapid demand for the photovoltaic system. However, the production increase is mainly in bulk-type crystalline (c-Si) solar cells. Thus, to meet the high demand of the market, single junction amorphous silicon (a-Si:H) solar cells production must be encouraged through active research in that regard. This could also help to improve its efficiency and reliability. There has recently been a sharp decrease in the production cost of the bulk Si solar cell, but the a-Si:H solar cell still remains the most economically viable in comparison to the other PV technologies. Companies such as Sharp are currently developing large-scale a-Si:H solar modules that can produce an efficiency of 10.5% after the long-term degradation process. To date, a-Si:H is believed to be one of the most promising thin-film PV technologies (Saito et al., 1993; Hamakawa et al., 1994). The cost of a solar PV manufacturing fell by 6% in 2014 (Santa, 2014), this is in accordance with the 2008 cost production forecast; thus, the cost record stands at 0.20 per watt, as reported by the NPD Solar publisher. Amorphous silicon (a-Si) solar modules generate more kilowatt-hour (kWh) of electricity per kilowatt (kW) than crystalline silicon or other technologies of the same capacity of installation. Furthermore, a-Si:H modules have more functional hours per day. Single junction amorphous silicon (a-Si:H) modules can function beyond the peak sun hours, and they also have a better performance on a cloudy day. vii In other words, a 1kW PV system of a-Si:H is expected to generate more electricity per year in comparison to 1kW PV from other technologies, hence there is a low energy payback time. In this study, commercially available single junction amorphous silicon modules were bought from a local market and they were immediately deployed outdoors. The initial reading of the modules, which served as baseline reading, showed an average of 25% decrease in the modules performance, therefore, there is a need for a long term monitoring process to obtain the best and worst performing modules. Measuring the performance parameters of these PV modules under real sun light (IV) provides a better degradation assessment. This conventional assessment cannot provide an in-depth insight responsible for the variation and degradation of the performance parameters. More obscured parameters like recombination current and ideality factor were obtained from the dark IV measurements. However, this is still superficial in a way. The intrinsic parameters were obtained from scanning probe microscopy (SPM) and CV measurements. The study focuses on the degradation analysis of a-Si:H due to an increase in defect density. A rise in the defect concentration is a huge problem because it causes long-term solar cell degradation, which increases the recombination current and decreases the conversion efficiency. Furthermore, it decreases the photo-generating current and reduces the effective efficiency of the solar device. In other words, the electrical output decreases. This research investigates the reduction in a-Si:H modules’ maximum power, and correlates these with a hot spot formation. A PVPM IV tracer was used for the outdoor characterisation of the module’s temperature profile, while the IR camera was used to analyse the hot spot centre. A four probe IV/CV from NMU was used for the indoor assessment of smaller samples cleaved from both the affected and non-affected regions to characterise the electrical variations across the module viii samples. To be precise, in this study, a naturally degraded single junction amorphous silicon module was delaminated and its mechanical properties were analysed and correlated with the contact potential from a Kelvin probe force microscopy (KPFM).
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- Date Issued: 2019
The electrical, structural and elemental analyis of degraded single junction amorphous silicon solar modules
- Authors: Osayemwenre, Gilbert Omorodion
- Date: 2015
- Subjects: Amorphous semiconductors , Solar cells , Silicon crystals
- Language: English
- Type: Thesis , Masters , Science
- Identifier: http://hdl.handle.net/10353/11674 , vital:39095
- Description: This study focuses on the degradation of solar cells due to localized heat. A decrease in optical absorbance represents a huge problem because of long-term solar cell degradation, decrease in absorption coefficient and a reduction in solar cell conversion efficiency. This decreases the photo-generating current hence reduces the effective efficiency of the solar device. As such the electrical output decreases, this research investigates the reduction in a-Si:H modules maximum power and its light absorption and correlates this with hot spot formation. Infrared Thermography was used for mapping of the module temperature profile, while IR flying meter software was used to analyze the hot spot centre. Fourier Transform Infrared Spectroscopy (FTIR) was used for absorption characterization. The study was undertaken during outdoor deployment of five PV modules. This method was chosen so as to deduce the practical effect of hot spot formation on the module’s absorption ability. The results show a direct correlation between localized heat and absorption degradation and structural degradation (damaged) in a-Si:H.
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- Date Issued: 2015