Development of MOVPE-grown InAsSb for barrier diode applications
- Authors: Dobson, Stephen R
- Date: 2020
- Subjects: Gallium arsenide semiconductors , Electronics
- Language: English
- Type: Thesis , Doctoral , DPhil
- Identifier: http://hdl.handle.net/10948/49071 , vital:41598
- Description: In this study, layers of GaSb, InAs and InAsSb are grown by metalorganic vapour phase epitaxy and characterised. Growth is conducted using the precursors of trimethylgallium, trimethylindium, trimethylantimony and tertiarybutylarsine. Focus is then placed on the characterisation of the materials, carried out by the techniques of X-ray diffraction, photoluminescence spectroscopy, Hall measurements and photocurrent spectroscopy. It is observed that V/III ratio plays a vital role in the growth of the GaSb and InAsSb layers. Epilayers of GaSb showed best crystalline quality when a V/III ratio of 1.2 was used at a growth temperature of 600 °C and a cell pressure of 600 Torr. Resultant Hall measurements indicated p-type GaSb. The Hall carrier concentrations of the p-type GaSb samples were analyzed considering electrical neutrality conditions and found to be highly compensated with evidence of band impurity conduction at low measurement temperatures. Both the donor and acceptor concentrations were determined to be of the order of 1016 cm−3 for all samples. For low temperature (< 150 K) a monovalent acceptor concentration is calculated to have an activation energy at approximately 20 meV. At high temperature (> 150 K) a divalent acceptor is extracted with an activation energy varying between samples based on compensation in a range of 90 meV to 70 meV. Photoluminescence measurements show four peaks with recombination mechanisms linked to the native acceptor identified in literature as either the gallium antisite and/or vacant gallium site. A fifth peak observed is attributed to the longitudinal phonon of the native acceptor. InAs and InAsSb epilayer are all grown at a temperature of 600 °C and cell pressure of 600 Torr. InAs is grown at a V/III ratio of 9.5 on GaAs substrate. Photoluminescence of the InAs layer shows two distinct peaks, one of which is an extrinsic band to band recombination. The other is attributed to free electron to acceptor or a donor-acceptor pair transition. An additional weak peak is also observed which is assigned to the longitudinal phonon of the band to band. InAsSb growth was conducted under a range of V/III ratios of 4.8 to 5, with a vapour phase composition of 0.4 to 0.435. Structural analysis via X-ray diffraction showed a 6 % to 12 % solid antimony content. Photoluminescence exhibited a single broad peak for all samples, with extended band tails. Temperature and power dependant analysis of luminescence indicated a convolution of extrinsic band to tail and band to band recombinations. Hall measurements indicated the InAsSb was n-type material with an apparent measured maximum mobility at 120 K of 9.5 × 103 cm2/V.s. and a room temperature apparent mobility of 7.5 × 103 cm2/V.s. Analysis of hall results using a two-layer model calculated a true bulk mobility of the epilayer at room temperature with an increased value of 15.4 × 103 cm2/V.s. The two-layer model details the effects of the surface conduction. From photoconductivity measurements and further analysis a resultant effective lifetime, at room temperature, was found to be on same order of magnitude as that of InAs materials. Application of a single Einstein oscillator extrapolated 0 K energy gaps for two samples of solid Sb contents of 6 % and 12 %, of 354 meV and 332 meV, respectively. Finally consideration was given to the growth of aluminium containing compounds, particularly AlGaSb. Multiple phases were observed under scanning electron microscope showing growth of GaSb regions surrounded by amorphous solid aluminium and/or aluminium oxide phases. The failure of the aluminium to incorporate into the desired crystal structure is speculated to be due to impure precursor introducing oxygen into the films. Additionally, the effectiveness of the gallium precursor compared to the aluminium precursor in helping the removal of the methyl groups at the growth surface, could also promote a preference for GaSb growth.
- Full Text:
- Date Issued: 2020
- Authors: Dobson, Stephen R
- Date: 2020
- Subjects: Gallium arsenide semiconductors , Electronics
- Language: English
- Type: Thesis , Doctoral , DPhil
- Identifier: http://hdl.handle.net/10948/49071 , vital:41598
- Description: In this study, layers of GaSb, InAs and InAsSb are grown by metalorganic vapour phase epitaxy and characterised. Growth is conducted using the precursors of trimethylgallium, trimethylindium, trimethylantimony and tertiarybutylarsine. Focus is then placed on the characterisation of the materials, carried out by the techniques of X-ray diffraction, photoluminescence spectroscopy, Hall measurements and photocurrent spectroscopy. It is observed that V/III ratio plays a vital role in the growth of the GaSb and InAsSb layers. Epilayers of GaSb showed best crystalline quality when a V/III ratio of 1.2 was used at a growth temperature of 600 °C and a cell pressure of 600 Torr. Resultant Hall measurements indicated p-type GaSb. The Hall carrier concentrations of the p-type GaSb samples were analyzed considering electrical neutrality conditions and found to be highly compensated with evidence of band impurity conduction at low measurement temperatures. Both the donor and acceptor concentrations were determined to be of the order of 1016 cm−3 for all samples. For low temperature (< 150 K) a monovalent acceptor concentration is calculated to have an activation energy at approximately 20 meV. At high temperature (> 150 K) a divalent acceptor is extracted with an activation energy varying between samples based on compensation in a range of 90 meV to 70 meV. Photoluminescence measurements show four peaks with recombination mechanisms linked to the native acceptor identified in literature as either the gallium antisite and/or vacant gallium site. A fifth peak observed is attributed to the longitudinal phonon of the native acceptor. InAs and InAsSb epilayer are all grown at a temperature of 600 °C and cell pressure of 600 Torr. InAs is grown at a V/III ratio of 9.5 on GaAs substrate. Photoluminescence of the InAs layer shows two distinct peaks, one of which is an extrinsic band to band recombination. The other is attributed to free electron to acceptor or a donor-acceptor pair transition. An additional weak peak is also observed which is assigned to the longitudinal phonon of the band to band. InAsSb growth was conducted under a range of V/III ratios of 4.8 to 5, with a vapour phase composition of 0.4 to 0.435. Structural analysis via X-ray diffraction showed a 6 % to 12 % solid antimony content. Photoluminescence exhibited a single broad peak for all samples, with extended band tails. Temperature and power dependant analysis of luminescence indicated a convolution of extrinsic band to tail and band to band recombinations. Hall measurements indicated the InAsSb was n-type material with an apparent measured maximum mobility at 120 K of 9.5 × 103 cm2/V.s. and a room temperature apparent mobility of 7.5 × 103 cm2/V.s. Analysis of hall results using a two-layer model calculated a true bulk mobility of the epilayer at room temperature with an increased value of 15.4 × 103 cm2/V.s. The two-layer model details the effects of the surface conduction. From photoconductivity measurements and further analysis a resultant effective lifetime, at room temperature, was found to be on same order of magnitude as that of InAs materials. Application of a single Einstein oscillator extrapolated 0 K energy gaps for two samples of solid Sb contents of 6 % and 12 %, of 354 meV and 332 meV, respectively. Finally consideration was given to the growth of aluminium containing compounds, particularly AlGaSb. Multiple phases were observed under scanning electron microscope showing growth of GaSb regions surrounded by amorphous solid aluminium and/or aluminium oxide phases. The failure of the aluminium to incorporate into the desired crystal structure is speculated to be due to impure precursor introducing oxygen into the films. Additionally, the effectiveness of the gallium precursor compared to the aluminium precursor in helping the removal of the methyl groups at the growth surface, could also promote a preference for GaSb growth.
- Full Text:
- Date Issued: 2020
Wavelength-modulation spectroscopy for the evaluation of the photoresponse of solar cells
- Mandanirina, Nambinintsoa Roméoh Hasinjatovo
- Authors: Mandanirina, Nambinintsoa Roméoh Hasinjatovo
- Date: 2016
- Subjects: Gallium arsenide semiconductors , Solar cells , Modulation spectroscopy
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: http://hdl.handle.net/10948/7244 , vital:21312
- Description: This study describes the development of a wavelength-modulation spectroscopy technique for the evaluation of solar cell devices. In particular, the technique is used to investigate the sub-bandgap response associated with the incorporation of GaSb quantum rings into the active region of a conventional GaAs p-i-n solar cell. These GaSb/GaAs quantum ring solar cells are a class of third generation cells, with the potential to exceed the Shockley-Queisser efficiency limit of single junction devices. Wavelength-modulation spectroscopy (WMS) techniques involve the modulation of the wavelength of a pseudo-monochromatic light source, with the resulting variation in the measured photocurrent then being a measure of the differential optical response of the solar cell. Although the conventional photocurrent spectrum of a solar cell is a good measure of the optical response characteristics, the differential technique gives supplemental detail related to the absorption spectrum. In addition to the basic WMS setup, we also developed an in situ flux correction module to ensure that a constant excitation intensity is maintained during the wavelength modulation. The excitation source inherently has a spectral dependence that leads to an undesirable contribution to the photocurrent signal. The operation of the flux corrected WMS setup has been demonstrated by photocurrent and photo-capacitance response measurements to obtain the differential quantum efficiency and charging characteristics of the quantum ring solar cells.
- Full Text:
- Date Issued: 2016
- Authors: Mandanirina, Nambinintsoa Roméoh Hasinjatovo
- Date: 2016
- Subjects: Gallium arsenide semiconductors , Solar cells , Modulation spectroscopy
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: http://hdl.handle.net/10948/7244 , vital:21312
- Description: This study describes the development of a wavelength-modulation spectroscopy technique for the evaluation of solar cell devices. In particular, the technique is used to investigate the sub-bandgap response associated with the incorporation of GaSb quantum rings into the active region of a conventional GaAs p-i-n solar cell. These GaSb/GaAs quantum ring solar cells are a class of third generation cells, with the potential to exceed the Shockley-Queisser efficiency limit of single junction devices. Wavelength-modulation spectroscopy (WMS) techniques involve the modulation of the wavelength of a pseudo-monochromatic light source, with the resulting variation in the measured photocurrent then being a measure of the differential optical response of the solar cell. Although the conventional photocurrent spectrum of a solar cell is a good measure of the optical response characteristics, the differential technique gives supplemental detail related to the absorption spectrum. In addition to the basic WMS setup, we also developed an in situ flux correction module to ensure that a constant excitation intensity is maintained during the wavelength modulation. The excitation source inherently has a spectral dependence that leads to an undesirable contribution to the photocurrent signal. The operation of the flux corrected WMS setup has been demonstrated by photocurrent and photo-capacitance response measurements to obtain the differential quantum efficiency and charging characteristics of the quantum ring solar cells.
- Full Text:
- Date Issued: 2016
On the electrical characterisation of bulk and epitaxial n-type Te doped GaSb
- Authors: Murape, Davison Munyaradzi
- Date: 2014
- Subjects: Gallium arsenide semiconductors , Electronics
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10554 , http://hdl.handle.net/10948/d1020763
- Description: Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It is difficult to picture a world without the modern day cutting edge technology. Imagine performing every day functions without “trivial” devices such as computers, cell phones or microwave ovens. The ability to tailor the band gaps of various binary, ternary and quaternary semiconductor systems has opened up a whole new spectrum of potential purpose designed devices [27]. This thesis focuses on the electronic properties of gallium (III) antimonide (V). The antimonides, in general, have the smallest band gap and highest electron mobility of the III-V compound semiconductors and are well suited for long wavelength emission and detection as well as high frequency switching device applications. Furthermore, III-V ternaries and quaternaries, such as (AlGaIn)(AsSb), lattice matched to gallium antimonide (GaSb) are considered serious competitors for HgCdTe and PbSe in long-wavelength infrared (LWIR) and very long-wavelength infrared (VLWIR) technology [4, 10, 11]. Epitaxial material systems based on GaSb are suitable for a wide range of applications such as missile and surveillance systems and a host of other military and civil applications. In addition, an assortment of devices on InAs, GaSb, and AlSb, including resonant tunnelling devices, infrared detectors and mid-infrared semiconductor lasers have been demonstrated [14, 15]. Furthermore, antimonide based devices could potentially reduce optical fibre power loss by a few orders of magnitude, as their implementation can lead to use of non-silica based optical fibres that minimise Raleigh scatter related power loss [8]. GaSb related technology faces a number of challenges. A significant amount of effort is required to exploit the potential it offers. GaSb oxidises readily in the ambient, resulting in the formation of a native oxide layer as well as deposits of elemental antimony (Sb) at the oxide/substrate interface therefore it has poor surface electronic properties resulting from high surface state densities[4, 17, 18]. As grown GaSb is characterised by a high density of surface states of which many are classified as non-radiative (Auger) recombination centres. The elemental Sb layer constitutes an unwanted conduction path parallel to the active surface region [17]. The potential that GaSb and GaSb-based strained layer superlattices offer as successors to the current generation of LWIR and VLWIR optoelectronic materials has therefore been largely impeded [4]. Furthermore, processing steps in device fabrication leads to an unintentionally damaged GaSb surface exacerbating the situation. Any efforts to engineer devices of superior quality on GaSb have to address these and more material specific problems [19]. This study attempts to contribute towards an improved understanding of the structural and electrical properties of the near surface region of Te-doped bulk (100) and MOVPE grown epitaxial Te doped n- GaSb. The main focus of this study is to develop means to de-oxidise and stabilize the highly reactive GaSb surface and to develop diode structures to demonstrate the improved interface characteristics and use related current–voltage (I-V) measurements to quantify the surface state density before and after treatment. These devices were also used to probe the near surface region for electrically active deep level defects that often act as non-radiative recombination centers. Au, Pd and Al were used as metals to establish a metal semiconductor barrier and subsequent depletion region. Sulphur based chemicals, ([(NH4)2S / (NH4)2SO4] + S), not previously reported for the treatment of (100) n-GaSb surfaces, and the commonly used passivants Na2S:9H2O and (NH4)2S were compared by assessing the electrical and structural properties both before and after treatment. The effect of treatment on the electrical response of the material was determined using current-voltage, capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements, while the surface morphology and composition were studied by SEM, AES and XPS.
- Full Text:
- Date Issued: 2014
- Authors: Murape, Davison Munyaradzi
- Date: 2014
- Subjects: Gallium arsenide semiconductors , Electronics
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10554 , http://hdl.handle.net/10948/d1020763
- Description: Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It is difficult to picture a world without the modern day cutting edge technology. Imagine performing every day functions without “trivial” devices such as computers, cell phones or microwave ovens. The ability to tailor the band gaps of various binary, ternary and quaternary semiconductor systems has opened up a whole new spectrum of potential purpose designed devices [27]. This thesis focuses on the electronic properties of gallium (III) antimonide (V). The antimonides, in general, have the smallest band gap and highest electron mobility of the III-V compound semiconductors and are well suited for long wavelength emission and detection as well as high frequency switching device applications. Furthermore, III-V ternaries and quaternaries, such as (AlGaIn)(AsSb), lattice matched to gallium antimonide (GaSb) are considered serious competitors for HgCdTe and PbSe in long-wavelength infrared (LWIR) and very long-wavelength infrared (VLWIR) technology [4, 10, 11]. Epitaxial material systems based on GaSb are suitable for a wide range of applications such as missile and surveillance systems and a host of other military and civil applications. In addition, an assortment of devices on InAs, GaSb, and AlSb, including resonant tunnelling devices, infrared detectors and mid-infrared semiconductor lasers have been demonstrated [14, 15]. Furthermore, antimonide based devices could potentially reduce optical fibre power loss by a few orders of magnitude, as their implementation can lead to use of non-silica based optical fibres that minimise Raleigh scatter related power loss [8]. GaSb related technology faces a number of challenges. A significant amount of effort is required to exploit the potential it offers. GaSb oxidises readily in the ambient, resulting in the formation of a native oxide layer as well as deposits of elemental antimony (Sb) at the oxide/substrate interface therefore it has poor surface electronic properties resulting from high surface state densities[4, 17, 18]. As grown GaSb is characterised by a high density of surface states of which many are classified as non-radiative (Auger) recombination centres. The elemental Sb layer constitutes an unwanted conduction path parallel to the active surface region [17]. The potential that GaSb and GaSb-based strained layer superlattices offer as successors to the current generation of LWIR and VLWIR optoelectronic materials has therefore been largely impeded [4]. Furthermore, processing steps in device fabrication leads to an unintentionally damaged GaSb surface exacerbating the situation. Any efforts to engineer devices of superior quality on GaSb have to address these and more material specific problems [19]. This study attempts to contribute towards an improved understanding of the structural and electrical properties of the near surface region of Te-doped bulk (100) and MOVPE grown epitaxial Te doped n- GaSb. The main focus of this study is to develop means to de-oxidise and stabilize the highly reactive GaSb surface and to develop diode structures to demonstrate the improved interface characteristics and use related current–voltage (I-V) measurements to quantify the surface state density before and after treatment. These devices were also used to probe the near surface region for electrically active deep level defects that often act as non-radiative recombination centers. Au, Pd and Al were used as metals to establish a metal semiconductor barrier and subsequent depletion region. Sulphur based chemicals, ([(NH4)2S / (NH4)2SO4] + S), not previously reported for the treatment of (100) n-GaSb surfaces, and the commonly used passivants Na2S:9H2O and (NH4)2S were compared by assessing the electrical and structural properties both before and after treatment. The effect of treatment on the electrical response of the material was determined using current-voltage, capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements, while the surface morphology and composition were studied by SEM, AES and XPS.
- Full Text:
- Date Issued: 2014
Atmospheric pressure metal-organic vapour phase epitaxial growth of InAs/GaSb strained layer superlattices
- Authors: Miya, Senzo Simo
- Date: 2013
- Subjects: Gallium arsenide semiconductors , Organometallic compounds , Compound semiconductors , Metal organic chemical vapor deposition , Superlattices as materials , Epitaxy
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10557 , http://hdl.handle.net/10948/d1020866
- Description: The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to grow InAs/GaSb strained layer superlattices (SLS’s) at 510 °C in this study. This is a starting point towards the development of MOVPE InAs/InxGa1-xSb SLS’s using the same system. Before the SLS’s could be attempted, the growth parameters for GaSb were optimised. Growth parameters for InAs were taken from reports on previous studies conducted using the same reactor. Initially, trimethylgallium, a source that has been used extensively in the same growth system for the growth of GaSb and InxGa1-xSb was intended to be used for gallium species. The high growth rates yielded by this source were too large for the growth of SLS structures, however. Thus, triethylgallium (rarely used for atmospheric pressure MOVPE) was utilized. GaSb layers (between 1 and 2 μm thick) were grown at two different temperatures (550 °C and 510 °C) with a varying V/III ratio. A V/III ratio of 1.5 was found to be optimal at 550 °C. However, the low incorporation efficiency of indium into GaSb at this temperature was inadequate to obtain InxGa1-xSb with an indium mole fraction (x) of around 0.3, which had previously been reported to be optimal for the performance of InAs/InxGa1-xSb SLS’s, due to the maximum splitting of the valence mini bands for this composition. The growth temperature was thus lowered to 510 °C. This resulted in an increase in the optimum V/III ratio to 1.75 for GaSb and yielded much higher incorporation efficiencies of indium in InxGa1-xSb. However, this lower growth temperature also produced poorer surface morphologies for both the binary and ternary layers, due to the reduced surface diffusion of the adsorbed species. An interface control study during the growth of InAs/GaSb SLS’s was subsequently conducted, by investigating the influence of different gas switching sequences on the interface type and quality. It was noted that the growth of SLS’s without any growth interruptions at the interfaces leads to tensile strained SLS’s (GaAs-like interfaces) with a rather large lattice mismatch. A 5 second flow of TMSb over the InAs surface and a flow of H2 over GaSb surface yielded compressively strained SLS’s. Flowing TMIn for 1 second and following by a flow of TMSb for 4 seconds over the GaSb surface, while flowing H2 for 5 seconds over the InAs surface, resulted in SLS’s with GaAs-like interfacial layers and a reduced lattice mismatch. Temperature gradients across the surface of the susceptor led to SLS’s with different structural quality. High resolution x-ray diffraction (HRXRD) was used to determine the thicknesses as well as the type of interfacial layers. The physical parameters of the SLS’s obtained from simulating the HRXRD spectra were comparable to the parameters obtained from cross sectional transmission electron microscopy (XTEM) images. The thicknesses of the layers and the interface type played a major role in determining the cut-off wavelength of the SLS’s.
- Full Text:
- Date Issued: 2013
- Authors: Miya, Senzo Simo
- Date: 2013
- Subjects: Gallium arsenide semiconductors , Organometallic compounds , Compound semiconductors , Metal organic chemical vapor deposition , Superlattices as materials , Epitaxy
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10557 , http://hdl.handle.net/10948/d1020866
- Description: The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to grow InAs/GaSb strained layer superlattices (SLS’s) at 510 °C in this study. This is a starting point towards the development of MOVPE InAs/InxGa1-xSb SLS’s using the same system. Before the SLS’s could be attempted, the growth parameters for GaSb were optimised. Growth parameters for InAs were taken from reports on previous studies conducted using the same reactor. Initially, trimethylgallium, a source that has been used extensively in the same growth system for the growth of GaSb and InxGa1-xSb was intended to be used for gallium species. The high growth rates yielded by this source were too large for the growth of SLS structures, however. Thus, triethylgallium (rarely used for atmospheric pressure MOVPE) was utilized. GaSb layers (between 1 and 2 μm thick) were grown at two different temperatures (550 °C and 510 °C) with a varying V/III ratio. A V/III ratio of 1.5 was found to be optimal at 550 °C. However, the low incorporation efficiency of indium into GaSb at this temperature was inadequate to obtain InxGa1-xSb with an indium mole fraction (x) of around 0.3, which had previously been reported to be optimal for the performance of InAs/InxGa1-xSb SLS’s, due to the maximum splitting of the valence mini bands for this composition. The growth temperature was thus lowered to 510 °C. This resulted in an increase in the optimum V/III ratio to 1.75 for GaSb and yielded much higher incorporation efficiencies of indium in InxGa1-xSb. However, this lower growth temperature also produced poorer surface morphologies for both the binary and ternary layers, due to the reduced surface diffusion of the adsorbed species. An interface control study during the growth of InAs/GaSb SLS’s was subsequently conducted, by investigating the influence of different gas switching sequences on the interface type and quality. It was noted that the growth of SLS’s without any growth interruptions at the interfaces leads to tensile strained SLS’s (GaAs-like interfaces) with a rather large lattice mismatch. A 5 second flow of TMSb over the InAs surface and a flow of H2 over GaSb surface yielded compressively strained SLS’s. Flowing TMIn for 1 second and following by a flow of TMSb for 4 seconds over the GaSb surface, while flowing H2 for 5 seconds over the InAs surface, resulted in SLS’s with GaAs-like interfacial layers and a reduced lattice mismatch. Temperature gradients across the surface of the susceptor led to SLS’s with different structural quality. High resolution x-ray diffraction (HRXRD) was used to determine the thicknesses as well as the type of interfacial layers. The physical parameters of the SLS’s obtained from simulating the HRXRD spectra were comparable to the parameters obtained from cross sectional transmission electron microscopy (XTEM) images. The thicknesses of the layers and the interface type played a major role in determining the cut-off wavelength of the SLS’s.
- Full Text:
- Date Issued: 2013
Radiation damage in GaAs and SiC
- Authors: Janse van Vuuren, Arno
- Date: 2011
- Subjects: Gallium arsenide semiconductors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10515 , http://hdl.handle.net/10948/1477 , Gallium arsenide semiconductors
- Description: In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to its application as a barrier coating layer in coated particle fuel used in high temperature gas cooled reactors. The characterisation of neutron irradiated GaAs has been included in this study in order to compare the radiation damage produced by protons and neutrons since proton bombardment of SiC could in principle be used for out-of-reactor simulations of the neutron irradiation damage created in SiC during reactor operation. The following SiC and GaAs compounds were investigated: As-implanted and annealed single crystal 6H-SiC wafers and polycrystalline 3C-SiC bulk material implanted with phosphorous ions. As-irradiated and annealed polycrystalline 3C-SiC bulk material irradiated with fast neutrons. As-irradiated and annealed single crystal GaAs wafers irradiated with fast neutrons. The main techniques used for the analyses were transmission electron microscopy (TEM) and nano-indentation hardness testing. The following results were obtained for the investigation of implanted and irradiated SiC and GaAs: Phosphorous Implanted 6H-SiC and 3C-SiC The depth of the P+ ion damage was found to be in good agreement with predictions by TRIM 2010. Micro-diffraction of the damage region in P+ implanted 6H-SiC (dose 5×1016 ions/cm2) indicates that amorphization occurred and that recrystallisation of this layer occurred during annealing at 1200°C. TEM analysis revealed that the layer recrystallised in the 3C phase of SiC and twin defects also formed within the layer. Micro-diffraction of the damage region in P+ implanted 3C-SiC (dose 1×1015 ions/cm2) indicates that amorphization also occurred for this sample and that recrystallisation of this layer occurred during annealing at 800°C. Nano-hardness testing of the P+ implanted 6H-SiC indicated that the hardness of the implanted SiC was initially much lower than unimplanted SiC due to the formation of an amorphous layer during ion implantation. After annealing the implanted SiC at 800°C and 1200°C, the hardness increased due to re-crystallisation and point defect hardening. Neutron Irradiated 3C-SiC TEM investigations of neutron irradiated 3C-SiC revealed the presence dark spot defects for SiC samples irradiated to a dose of 5.9×1021 n/cm2 and 9.6×1021 n/cm2. Neutron Irradiated GaAs TEM investigation revealed a high density of dislocation loops in the unannealed neutron irradiated GaAs. The loop diameters increased after post-irradiation annealing in the range 600 to 800 °C. The dislocation loops were found to be of interstitial type lying on the {110} cleavage planes of GaAs. This finding is in agreement with earlier studies on 300 keV proton bombarded and 1 MeV electron irradiated GaAs where interstitial loops on {110} planes became visible after annealing at temperatures exceeding 500 °C. The small dislocation loops on the {110} planes of the neutron irradiated GaAs transformed to large loops and dislocations after annealing at 1000 °C.
- Full Text:
- Date Issued: 2011
- Authors: Janse van Vuuren, Arno
- Date: 2011
- Subjects: Gallium arsenide semiconductors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10515 , http://hdl.handle.net/10948/1477 , Gallium arsenide semiconductors
- Description: In this dissertation the microstructure and hardness of phosphorous implanted SiC and neutron irradiated SiC and GaAs have been investigated. SiC is important due to its application as a barrier coating layer in coated particle fuel used in high temperature gas cooled reactors. The characterisation of neutron irradiated GaAs has been included in this study in order to compare the radiation damage produced by protons and neutrons since proton bombardment of SiC could in principle be used for out-of-reactor simulations of the neutron irradiation damage created in SiC during reactor operation. The following SiC and GaAs compounds were investigated: As-implanted and annealed single crystal 6H-SiC wafers and polycrystalline 3C-SiC bulk material implanted with phosphorous ions. As-irradiated and annealed polycrystalline 3C-SiC bulk material irradiated with fast neutrons. As-irradiated and annealed single crystal GaAs wafers irradiated with fast neutrons. The main techniques used for the analyses were transmission electron microscopy (TEM) and nano-indentation hardness testing. The following results were obtained for the investigation of implanted and irradiated SiC and GaAs: Phosphorous Implanted 6H-SiC and 3C-SiC The depth of the P+ ion damage was found to be in good agreement with predictions by TRIM 2010. Micro-diffraction of the damage region in P+ implanted 6H-SiC (dose 5×1016 ions/cm2) indicates that amorphization occurred and that recrystallisation of this layer occurred during annealing at 1200°C. TEM analysis revealed that the layer recrystallised in the 3C phase of SiC and twin defects also formed within the layer. Micro-diffraction of the damage region in P+ implanted 3C-SiC (dose 1×1015 ions/cm2) indicates that amorphization also occurred for this sample and that recrystallisation of this layer occurred during annealing at 800°C. Nano-hardness testing of the P+ implanted 6H-SiC indicated that the hardness of the implanted SiC was initially much lower than unimplanted SiC due to the formation of an amorphous layer during ion implantation. After annealing the implanted SiC at 800°C and 1200°C, the hardness increased due to re-crystallisation and point defect hardening. Neutron Irradiated 3C-SiC TEM investigations of neutron irradiated 3C-SiC revealed the presence dark spot defects for SiC samples irradiated to a dose of 5.9×1021 n/cm2 and 9.6×1021 n/cm2. Neutron Irradiated GaAs TEM investigation revealed a high density of dislocation loops in the unannealed neutron irradiated GaAs. The loop diameters increased after post-irradiation annealing in the range 600 to 800 °C. The dislocation loops were found to be of interstitial type lying on the {110} cleavage planes of GaAs. This finding is in agreement with earlier studies on 300 keV proton bombarded and 1 MeV electron irradiated GaAs where interstitial loops on {110} planes became visible after annealing at temperatures exceeding 500 °C. The small dislocation loops on the {110} planes of the neutron irradiated GaAs transformed to large loops and dislocations after annealing at 1000 °C.
- Full Text:
- Date Issued: 2011
On the Processing of InAsSb/GaSb photodiodes for infrared detection
- Authors: Odendaal, Vicky
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10523 , http://hdl.handle.net/10948/980 , Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Description: The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric acid based etchant, an acetic acid based etchant, an ammonium based etchant, a hydrochloric acid based etchant as well as an organic rinse procedure. These cleaning and etching steps were evaluated at several temperatures. Measurements were performed on an Alpha Step stylus profiler as well as an atomic force microscope. Metal-insulator-semiconductor capacitor devices were manufactured, on both InAs and InSb material, in order to investigate the effects of the above-mentioned etchants combined with surface passivation techniques in terms of surface state densities. Capacitance-versus-bias voltage measurements were done to determine the resultant surface state densities and to compare these to the surface state density of an untreated reference sample. The surface passivation techniques included KOH, Na2S as well as (NH4)2S anodisation. Auger electron spectroscopy measurements were done on InAs and InSb material in order to examine possible surface contamination due to the etchants as well as combinations of these etching and anodisation procedures. The extent of surface coverage by contaminants as well as by the intrinsic elements was measured. The results of the cleaning and etching as well as the surface passivation studies were used to manufacture photovoltaic infrared diodes on an MOCVD (metal oxide chemical vapour deposition) grown p-InAs0.91Sb0.09/i- InAs0.91Sb0.09/n-GaSb structure. Current-versus-voltage and electro-optical measurements were performed on the these diodes in order to evaluate the effect of sulphuric acid based etching combined with KOH, Na2S or (NH4)2S anodisation on the detector performance. The results of surface passivated structures were compared to those of an unpassivated reference detector.
- Full Text:
- Date Issued: 2008
- Authors: Odendaal, Vicky
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10523 , http://hdl.handle.net/10948/980 , Gallium arsenide semiconductors , Photovoltaic cells , Infrared detectors , Gas-detectors
- Description: The objective of this dissertation is the development of the necessary processing steps needed to manufacture infrared photodiodes on InAs1-xSbx material. Preliminary surface preparation steps were performed on both InAs and InSb material, thus covering both possible extremes of the antimony mole fraction. The first experiments endeavoured to characterise the effect of several possible etchants with regards to etch rate, repeatability, limitations for photolithographic patterning and the resultant surface roughness. The etchants investigated include a lactic acid based etchant, a sulphuric acid based etchant, an acetic acid based etchant, an ammonium based etchant, a hydrochloric acid based etchant as well as an organic rinse procedure. These cleaning and etching steps were evaluated at several temperatures. Measurements were performed on an Alpha Step stylus profiler as well as an atomic force microscope. Metal-insulator-semiconductor capacitor devices were manufactured, on both InAs and InSb material, in order to investigate the effects of the above-mentioned etchants combined with surface passivation techniques in terms of surface state densities. Capacitance-versus-bias voltage measurements were done to determine the resultant surface state densities and to compare these to the surface state density of an untreated reference sample. The surface passivation techniques included KOH, Na2S as well as (NH4)2S anodisation. Auger electron spectroscopy measurements were done on InAs and InSb material in order to examine possible surface contamination due to the etchants as well as combinations of these etching and anodisation procedures. The extent of surface coverage by contaminants as well as by the intrinsic elements was measured. The results of the cleaning and etching as well as the surface passivation studies were used to manufacture photovoltaic infrared diodes on an MOCVD (metal oxide chemical vapour deposition) grown p-InAs0.91Sb0.09/i- InAs0.91Sb0.09/n-GaSb structure. Current-versus-voltage and electro-optical measurements were performed on the these diodes in order to evaluate the effect of sulphuric acid based etching combined with KOH, Na2S or (NH4)2S anodisation on the detector performance. The results of surface passivated structures were compared to those of an unpassivated reference detector.
- Full Text:
- Date Issued: 2008
Towards the development of InAs/GaInSb strained-layer superlattices for infrared detection
- Authors: Botha, Lindsay
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10526 , http://hdl.handle.net/10948/713 , Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Description: This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.
- Full Text:
- Date Issued: 2008
- Authors: Botha, Lindsay
- Date: 2008
- Subjects: Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10526 , http://hdl.handle.net/10948/713 , Gallium arsenide semiconductors , Indium alloys , Compound semiconductors , Organometallic compounds , Infrared detectors , Infrared technology , Superlattices as materials
- Description: This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.
- Full Text:
- Date Issued: 2008
Characterisation of InAs-based epilayers by FTIR spectroscopy
- Authors: Baisitse, Tshepiso Revonia
- Date: 2007
- Subjects: Fourier transform infrared spectroscopy , Gallium arsenide semiconductors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10534 , http://hdl.handle.net/10948/474 , Fourier transform infrared spectroscopy , Gallium arsenide semiconductors
- Description: This study focuses on the characterization of InAs and InAs1-xSbx epitaxial layers by infrared reflectance and transmittance spectroscopy and Hall measurements. Reflectance measurements were performed in order to obtain the dielectric parameters and to extract from these information about the electrical properties (mobility and carrier concentration) of this important III-V material system. The transmittance measurements were used to determine the bandgap of InAsSb. Infrared reflectivity and transmittance measurements were performed in the wavelength range 200 – 2000 cm-1 on InAs and InAsSb layers grown on three types of substrates. A classical two oscillator model that takes into account both the free carriers and the lattice, was used to analyse the reflectance data using the BMDP® computer curve fitting software. The dielectric parameters and the electrical properties (carrier concentration and mobility) were extracted from the simulations. Due to the low free carrier concentration in the epitaxial structures, the plasma resonance frequency (ωp) values obtained from the simulations of reflectance spectra measured above 200 cm-1, were in the order of 20-30 cm-1. These low values were confirmed by direct measurements of ωp in reflectance spectra obtained in the range 15-200 cm-1. The simulated carrier concentration and mobility values determined optically were compared to the values determined by Hall measurements at room temperature and previously reported values by other researchers. The simulated values obtained were in reasonable agreement with the Hall values. The simulated and measured carrier concentrations obtained for InAs layers were significantly higher than the intrinsic carrier concentration for InAs at room temperature, indicating notable concentrations of donors resulting from the growth process.
- Full Text:
- Date Issued: 2007
- Authors: Baisitse, Tshepiso Revonia
- Date: 2007
- Subjects: Fourier transform infrared spectroscopy , Gallium arsenide semiconductors
- Language: English
- Type: Thesis , Masters , MSc
- Identifier: vital:10534 , http://hdl.handle.net/10948/474 , Fourier transform infrared spectroscopy , Gallium arsenide semiconductors
- Description: This study focuses on the characterization of InAs and InAs1-xSbx epitaxial layers by infrared reflectance and transmittance spectroscopy and Hall measurements. Reflectance measurements were performed in order to obtain the dielectric parameters and to extract from these information about the electrical properties (mobility and carrier concentration) of this important III-V material system. The transmittance measurements were used to determine the bandgap of InAsSb. Infrared reflectivity and transmittance measurements were performed in the wavelength range 200 – 2000 cm-1 on InAs and InAsSb layers grown on three types of substrates. A classical two oscillator model that takes into account both the free carriers and the lattice, was used to analyse the reflectance data using the BMDP® computer curve fitting software. The dielectric parameters and the electrical properties (carrier concentration and mobility) were extracted from the simulations. Due to the low free carrier concentration in the epitaxial structures, the plasma resonance frequency (ωp) values obtained from the simulations of reflectance spectra measured above 200 cm-1, were in the order of 20-30 cm-1. These low values were confirmed by direct measurements of ωp in reflectance spectra obtained in the range 15-200 cm-1. The simulated carrier concentration and mobility values determined optically were compared to the values determined by Hall measurements at room temperature and previously reported values by other researchers. The simulated values obtained were in reasonable agreement with the Hall values. The simulated and measured carrier concentrations obtained for InAs layers were significantly higher than the intrinsic carrier concentration for InAs at room temperature, indicating notable concentrations of donors resulting from the growth process.
- Full Text:
- Date Issued: 2007
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