Investigation of potential induced degradation as a performance limiting defect in photovoltaic modules
- Authors: Kwembur, Isaac Morko
- Date: 2020
- Subjects: Photovoltaic cells
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: http://hdl.handle.net/10948/48423 , vital:40875
- Description: Potential Induced Degradation (PID) impacts negatively on photovoltaic (PV) module durability because it significantly affects the output of PV modules and systems. Unless detected at infancy, PID progression can be catastrophic. This study involved systematic PID stressing of PV modules using a custom-built environmental chamber that can achieve suitable environmental conditions, viz., of the 35 °C ± 1 °C and relative humidity of 75 % ± 5 %. The first part of this work was to induce PID using three approaches: climate chamber testing, inducing PID using a conductive aluminium plate on the surface of the module without touching the frame and a localised PID induction on one cell in a module. The second part is to detect induced PID using Electroluminescence (EL) images taken at current corresponding to 10% Isc, EL histograms analysis and Voc ratio taken at 1000 W/m2 to 200 W/m2 . The third part is to study module regeneration after PID shunting degradation in two ways, viz., forced reverse polarization and natural recovery. The PID detection tools used in this work are well known module characterization techniques such as EL imaging, Infrared imaging, and light and dark current-voltage measurements. These characterisation tools are used in combination to detect defects such as optical losses, cracks, breakage, electric circuit degradation and PID. Under normal testing PID was detected and in some cases, modules were able to recover, while for advanced stage PID regeneration or PID reversal was difficult. This thesis focuses on PID detection at infancy using three approaches; EL imaging at current corresponding to 10% of Isc. Light and dark current – voltage measurements (L-IV & D-IV) and open circuit voltage (Voc) ratios at low irradiance. The early detection procedures are essential in reversing the degradation caused by PID which is reversible. The time taken to reverse the PID degradation will depend on the extent of the degradation. If detected early, it will take a short period of time to completely reverse lost power. Infrared thermography is a non-contact characteristic tool that can be deployed in large scale plants using drones to detect the presence of PID in PV plants. Module performance and device parameters extracted from the L-IV curves on a module before and after PID stress, such as Pmpp, Voc, Isc Fill Factor (FF), shunt resistance (Rsh) and series resistance (Rs) and ideality (n) are sensitive to PID shunting. Voc and Rsh drop significantly with the onset of PID, while Rs increases. The decrease in Voc and Rsh is due to heavy shunting on the module resulting in increased carrier recombination, while the increase in Rs is due to increased shunting paths leading to decreased photocurrent. When substantial degradation on a module occurs Pmpp, FF and n will drop and at very advanced stage of PID degradation Isc may drop excessively.
- Full Text:
- Date Issued: 2020
- Authors: Kwembur, Isaac Morko
- Date: 2020
- Subjects: Photovoltaic cells
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: http://hdl.handle.net/10948/48423 , vital:40875
- Description: Potential Induced Degradation (PID) impacts negatively on photovoltaic (PV) module durability because it significantly affects the output of PV modules and systems. Unless detected at infancy, PID progression can be catastrophic. This study involved systematic PID stressing of PV modules using a custom-built environmental chamber that can achieve suitable environmental conditions, viz., of the 35 °C ± 1 °C and relative humidity of 75 % ± 5 %. The first part of this work was to induce PID using three approaches: climate chamber testing, inducing PID using a conductive aluminium plate on the surface of the module without touching the frame and a localised PID induction on one cell in a module. The second part is to detect induced PID using Electroluminescence (EL) images taken at current corresponding to 10% Isc, EL histograms analysis and Voc ratio taken at 1000 W/m2 to 200 W/m2 . The third part is to study module regeneration after PID shunting degradation in two ways, viz., forced reverse polarization and natural recovery. The PID detection tools used in this work are well known module characterization techniques such as EL imaging, Infrared imaging, and light and dark current-voltage measurements. These characterisation tools are used in combination to detect defects such as optical losses, cracks, breakage, electric circuit degradation and PID. Under normal testing PID was detected and in some cases, modules were able to recover, while for advanced stage PID regeneration or PID reversal was difficult. This thesis focuses on PID detection at infancy using three approaches; EL imaging at current corresponding to 10% of Isc. Light and dark current – voltage measurements (L-IV & D-IV) and open circuit voltage (Voc) ratios at low irradiance. The early detection procedures are essential in reversing the degradation caused by PID which is reversible. The time taken to reverse the PID degradation will depend on the extent of the degradation. If detected early, it will take a short period of time to completely reverse lost power. Infrared thermography is a non-contact characteristic tool that can be deployed in large scale plants using drones to detect the presence of PID in PV plants. Module performance and device parameters extracted from the L-IV curves on a module before and after PID stress, such as Pmpp, Voc, Isc Fill Factor (FF), shunt resistance (Rsh) and series resistance (Rs) and ideality (n) are sensitive to PID shunting. Voc and Rsh drop significantly with the onset of PID, while Rs increases. The decrease in Voc and Rsh is due to heavy shunting on the module resulting in increased carrier recombination, while the increase in Rs is due to increased shunting paths leading to decreased photocurrent. When substantial degradation on a module occurs Pmpp, FF and n will drop and at very advanced stage of PID degradation Isc may drop excessively.
- Full Text:
- Date Issued: 2020
On the characterisation of diffused light and optical elements in high concentrator photovoltaic modules
- Authors: Schultz, Ross Dane
- Date: 2015
- Subjects: Photovoltaic cells , Solar concentrators , Optical materials
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: http://hdl.handle.net/10948/5170 , vital:20817
- Description: High Concentrated Photovoltaics (H-CPV) promise a more efficient, higher power output than traditional photovoltaic modules. This is achieved by concentrating sunlight onto a small triple junction (CTJ) InGaP/InGaAs/Ge cell (ranging from 3.14 mm2 to 1 cm2) by using precision optical systems. These systems utilise non-imaging optics to concentrate and distribute the incident solar flux uniformly onto the CTJ device receiver to achieve maximum performance and power output from an H-CPV module. However, the performance of the device can be reduced due to the partial or complete absorption of a range of wavelengths present in the solar spectrum by the optical materials that are used for concentration. An investigation to determine the current density topographies of each subcell in a CTJ cell by multiple raster scans of an optical fibre receiver of a spectrometer in the plane of the aperture of the secondary’s optical element was conducted. Results showed that the physical properties of the optical elements’ material absorbed different amounts of the spectral content with respect to the subcell photosensitive wavelength regions. The facet properties of the primary optical Fresnel lens showed that the more rounded the Fresnel facets were, the lower the concentration of sunlight incident onto the CTJ cell. The increase in facet numbers showed an increase in scattering of the incident sunlight and chromatic aberrations. Chromatic aberration created by the refractive optics showed a variation in the amount of concentration on each individual subcell as well as the difference in intensity profiles across for the different subcells. Based on these results and the development of new multi-junction devices by industry, the performance of a four and six-junction device with the optical materials was investigated by simulations. The simulations showed that the careful integration of an additional subcell in a multi-junction device could rectify current mismatch between the subcells in the device. Based on the simulations, the best performing multi-junction cell was identified as the four-junction device that showed a cell and module efficiency under operation of 42.5 % and 35.5 %, respectively. Additionally, based on the performance results observed from the H-CPV module, the development of an HCPV module that would attempt to harness the incident tracked diffuse sunlight available to a concentrator photovoltaic (CPV) module for additional energy yield was undertaken. The part of the study comprised of measurements of the solar source, design of a prototype Hybrid High Concentrator Photovoltaic (HH-CPV) module. Results showed that power generation from the H-CPV system was highly dependent on the DNI levels and fluctuates greatly with variation in the DNI. The irradiance levels within the diffuse regions of the H-CPV module showed that the baseplate and vertical sides had an average irradiance range of 140-450 and 50-225 W.m-2, respectively. Irradiance topographic raster scans revealed that the baseplate and vertical sides had a relatively uniform intensity distribution and was identified as favourable sites for diffuse cell population. Simulations of various PV technologies showed the most suitable technology for the placement within the cavity of the HH-CPV module. The developed HH-CPV module was finalized with the utilization of CIS modules to harness the diffuse irradiance. During a 3 month power monitoring of the HH-CPV system, it was determined that the major power generation for the HH-CPV module come from the CPV component, while the CIS modules showed a minor power contribution. The total energy yield for the monitoring period was 45.99, 3.89 and 1.76 kW.h for the CPV, four-vertical sides and baseplate components, respectively. The increase in energy yield of the HH-CPV module when compared to the standard H-CPV module was determined to be 12.35 % for the monitoring period. The incorporation of the CIS modules into the H-CPV module to create the HH-CPV module did increase the energy yield of the module during high DNI conditions and did offset the almost zero power generation during low DNI conditions.
- Full Text:
- Date Issued: 2015
- Authors: Schultz, Ross Dane
- Date: 2015
- Subjects: Photovoltaic cells , Solar concentrators , Optical materials
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: http://hdl.handle.net/10948/5170 , vital:20817
- Description: High Concentrated Photovoltaics (H-CPV) promise a more efficient, higher power output than traditional photovoltaic modules. This is achieved by concentrating sunlight onto a small triple junction (CTJ) InGaP/InGaAs/Ge cell (ranging from 3.14 mm2 to 1 cm2) by using precision optical systems. These systems utilise non-imaging optics to concentrate and distribute the incident solar flux uniformly onto the CTJ device receiver to achieve maximum performance and power output from an H-CPV module. However, the performance of the device can be reduced due to the partial or complete absorption of a range of wavelengths present in the solar spectrum by the optical materials that are used for concentration. An investigation to determine the current density topographies of each subcell in a CTJ cell by multiple raster scans of an optical fibre receiver of a spectrometer in the plane of the aperture of the secondary’s optical element was conducted. Results showed that the physical properties of the optical elements’ material absorbed different amounts of the spectral content with respect to the subcell photosensitive wavelength regions. The facet properties of the primary optical Fresnel lens showed that the more rounded the Fresnel facets were, the lower the concentration of sunlight incident onto the CTJ cell. The increase in facet numbers showed an increase in scattering of the incident sunlight and chromatic aberrations. Chromatic aberration created by the refractive optics showed a variation in the amount of concentration on each individual subcell as well as the difference in intensity profiles across for the different subcells. Based on these results and the development of new multi-junction devices by industry, the performance of a four and six-junction device with the optical materials was investigated by simulations. The simulations showed that the careful integration of an additional subcell in a multi-junction device could rectify current mismatch between the subcells in the device. Based on the simulations, the best performing multi-junction cell was identified as the four-junction device that showed a cell and module efficiency under operation of 42.5 % and 35.5 %, respectively. Additionally, based on the performance results observed from the H-CPV module, the development of an HCPV module that would attempt to harness the incident tracked diffuse sunlight available to a concentrator photovoltaic (CPV) module for additional energy yield was undertaken. The part of the study comprised of measurements of the solar source, design of a prototype Hybrid High Concentrator Photovoltaic (HH-CPV) module. Results showed that power generation from the H-CPV system was highly dependent on the DNI levels and fluctuates greatly with variation in the DNI. The irradiance levels within the diffuse regions of the H-CPV module showed that the baseplate and vertical sides had an average irradiance range of 140-450 and 50-225 W.m-2, respectively. Irradiance topographic raster scans revealed that the baseplate and vertical sides had a relatively uniform intensity distribution and was identified as favourable sites for diffuse cell population. Simulations of various PV technologies showed the most suitable technology for the placement within the cavity of the HH-CPV module. The developed HH-CPV module was finalized with the utilization of CIS modules to harness the diffuse irradiance. During a 3 month power monitoring of the HH-CPV system, it was determined that the major power generation for the HH-CPV module come from the CPV component, while the CIS modules showed a minor power contribution. The total energy yield for the monitoring period was 45.99, 3.89 and 1.76 kW.h for the CPV, four-vertical sides and baseplate components, respectively. The increase in energy yield of the HH-CPV module when compared to the standard H-CPV module was determined to be 12.35 % for the monitoring period. The incorporation of the CIS modules into the H-CPV module to create the HH-CPV module did increase the energy yield of the module during high DNI conditions and did offset the almost zero power generation during low DNI conditions.
- Full Text:
- Date Issued: 2015
Spatially resolved opto-electric measurements of photovoltaic materials and devices
- Authors: Thantsha, Nicolas Matome
- Date: 2010
- Subjects: Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10520 , http://hdl.handle.net/10948/1123 , Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Description: The objective of this study is to characterize and analyse defects in solar cell devices. Materials used to fabricate solar cells are not defects free and therefore, there is a need to investigate defects in cells. To investigate this, a topographical technique was developed and employed which uses a non-destructive methodology to analyse solar cells. A system was built which uses a technique based on a laser beam induced current (LBIC). LBIC technique involves focusing light on to a surface of a solar cell device in order to create a photo-generated current that can be measured in the external circuit for analyses. The advantage of this technique is that it allows parameter extraction. Parameters that can be extracted include short-circuit current, carrier lifetime and also the external and internal quantum efficiency of a solar cell. In this thesis, LBIC measurements in the form of picture maps are used to indicate the distribution of the localized beam induced current within solar cells. Areas with low minority carrier lifetime in solar cells are made visible by LBIC mapping. Surface reflection intensity measurements of cells can also be mapped using the LBIC system developed in this study. The system is also capable of mapping photo-generated current of a cell below and above room temperature. This thesis also presents an assessment procedure capable of assessing the device and performance parameters with reference to I-V measurements. The dark and illuminated I-V characteristics of solar cells were investigated. The illuminated I-V characteristics of solar cells were obtained using a defocused laser beam. Dark I-V measurements were performed by applying voltage across the cell in the dark and measuring a current through it. The device parameters which describe the behaviour of I-V characteristic were extracted from the I-V data using Particle Swarm Optimization (PSO) method based on a one-and two-diode solar cell models. Solar cells of different technologies were analysed, namely, single-crystalline (c-Si) and multicrystalline (mc-Si) silicon, Edge-defined Film-fed Growth Si (EFG-Si) and Cu(In,Ga)(Se,S)2 (CIGSS) thin film based cells. The LBIC results illustrated the effect of surface reflection features and material defects in the solar cell investigated. IQE at a wavelength of 660 nm were measured on these cells and the results in general emphasised the importance of correcting optical losses, i.e. reflection loss, when characterizing different types of defects. The agreement between the IQE measurements and I-V characteristics of a cell showed that the differences in crystal grains influence the performance of a mc-Si cell. The temperature-dependence of I-V characteristics of a CIGSS solar cell was investigated. The results showed that, for this material, the photo response is reduced at elevated temperatures. In addition to LBIC using a laser beam, solar spectral radiation was employed to obtained device performance parameters. The results emphasised the effect of grain boundaries as a recombination centres for photo-generated hole-pairs. Lastly, mesa diode characterizations of solar cells were investigated. Mesa diodes are achieved by etching down a solar cell so that the plateau regions are formed. Mesa diodes expose the p-n junction, and therefore mesa diode analysis provides a better way of determining and revealing the fundamental current conduction mechanism at the junction. Mesa diodes avoid possible edge effects. This study showed that mesa diodes can be used to characterize spatial non-uniformities in solar cells. The results obtained in this study indicate that LBIC is a useful tool for defect characterization in solar cells. Also LBIC complements other characterization techniques such as I-V characterization.
- Full Text:
- Date Issued: 2010
- Authors: Thantsha, Nicolas Matome
- Date: 2010
- Subjects: Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10520 , http://hdl.handle.net/10948/1123 , Photovoltaic cells , Photovoltaic power systems , Photovoltaic power generation
- Description: The objective of this study is to characterize and analyse defects in solar cell devices. Materials used to fabricate solar cells are not defects free and therefore, there is a need to investigate defects in cells. To investigate this, a topographical technique was developed and employed which uses a non-destructive methodology to analyse solar cells. A system was built which uses a technique based on a laser beam induced current (LBIC). LBIC technique involves focusing light on to a surface of a solar cell device in order to create a photo-generated current that can be measured in the external circuit for analyses. The advantage of this technique is that it allows parameter extraction. Parameters that can be extracted include short-circuit current, carrier lifetime and also the external and internal quantum efficiency of a solar cell. In this thesis, LBIC measurements in the form of picture maps are used to indicate the distribution of the localized beam induced current within solar cells. Areas with low minority carrier lifetime in solar cells are made visible by LBIC mapping. Surface reflection intensity measurements of cells can also be mapped using the LBIC system developed in this study. The system is also capable of mapping photo-generated current of a cell below and above room temperature. This thesis also presents an assessment procedure capable of assessing the device and performance parameters with reference to I-V measurements. The dark and illuminated I-V characteristics of solar cells were investigated. The illuminated I-V characteristics of solar cells were obtained using a defocused laser beam. Dark I-V measurements were performed by applying voltage across the cell in the dark and measuring a current through it. The device parameters which describe the behaviour of I-V characteristic were extracted from the I-V data using Particle Swarm Optimization (PSO) method based on a one-and two-diode solar cell models. Solar cells of different technologies were analysed, namely, single-crystalline (c-Si) and multicrystalline (mc-Si) silicon, Edge-defined Film-fed Growth Si (EFG-Si) and Cu(In,Ga)(Se,S)2 (CIGSS) thin film based cells. The LBIC results illustrated the effect of surface reflection features and material defects in the solar cell investigated. IQE at a wavelength of 660 nm were measured on these cells and the results in general emphasised the importance of correcting optical losses, i.e. reflection loss, when characterizing different types of defects. The agreement between the IQE measurements and I-V characteristics of a cell showed that the differences in crystal grains influence the performance of a mc-Si cell. The temperature-dependence of I-V characteristics of a CIGSS solar cell was investigated. The results showed that, for this material, the photo response is reduced at elevated temperatures. In addition to LBIC using a laser beam, solar spectral radiation was employed to obtained device performance parameters. The results emphasised the effect of grain boundaries as a recombination centres for photo-generated hole-pairs. Lastly, mesa diode characterizations of solar cells were investigated. Mesa diodes are achieved by etching down a solar cell so that the plateau regions are formed. Mesa diodes expose the p-n junction, and therefore mesa diode analysis provides a better way of determining and revealing the fundamental current conduction mechanism at the junction. Mesa diodes avoid possible edge effects. This study showed that mesa diodes can be used to characterize spatial non-uniformities in solar cells. The results obtained in this study indicate that LBIC is a useful tool for defect characterization in solar cells. Also LBIC complements other characterization techniques such as I-V characterization.
- Full Text:
- Date Issued: 2010
Investigation of device and performance parameters of photovoltaic devices
- Macabebe, Erees Queen Barrido
- Authors: Macabebe, Erees Queen Barrido
- Date: 2009
- Subjects: Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10538 , http://hdl.handle.net/10948/1003 , http://hdl.handle.net/10948/d1012890 , Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Description: In order to investigate the influence of parasitic resistances, saturation current and diode ideality factor on the performance of photovoltaic devices, parameter extraction routines employing the standard iteration (SI) method and the particle swarm optimization (PSO) method were developed to extract the series resistance, shunt resistance, saturation current and ideality factor from the I-V characteristics of solar cells and PV modules. The well-known one- and two-diode models were used to describe the behavior of the I-V curve and the parameters of the models were determined by approximation and iteration techniques. The SI and the PSO extraction programmes were used to assess the suitability of the one- and the two-diode solar cell models in describing the I-V characteristics of mono- and multicrystalline silicon solar cells, CISS- and CIGSS-based solar cells. This exercise revealed that the two-diode model provides more information regarding the different processes involved in solar cell operation. Between the two methods developed, the PSO method is faster, yielded fitted curves with lower standard deviation of residuals and, therefore, was the preferred extraction method. The PSO method was then used to extract the device parameters of CISS-based solar cells with the CISS layer selenized under different selenization process conditions and CIGSS-based solar cells with varying i-ZnO layer thickness. For the CISS-based solar cells, the detrimental effect of parasitic resistances on device performance increased when the temperature and duration of the selenization process was increased. For the CIGSS-based devices, photogeneration improved with increasing i-ZnO layer thickness. At high forward bias, bulk recombination and/or tunneling-assisted recombination were the dominant processes affecting the I-V characteristics of the devices. v Lastly, device and performance parameters of mono-, multicrystalline silicon and CIS modules derived from I-V characteristics obtained under dark and illuminated conditions were analyzed considering the effects of temperature on the performance of the devices. Results showed that the effects of parasitic resistances are greater under illumination and, under outdoor conditions, the values further declined due to increasing temperature. The saturation current and ideality factor also increased under outdoor conditions which suggest increased recombination and, coupled with the adverse effects of parasitic resistances, these factors result in lower FF and lower maximum power point. Analysis performed on crystalline silicon and thin film devices utilized in this study revealed that parameter extraction from I-V characteristics of photovoltaic devices and, in particular, the implementation of PSO in solar cell device parameter extraction developed in this work is a useful characterization technique.
- Full Text:
- Date Issued: 2009
- Authors: Macabebe, Erees Queen Barrido
- Date: 2009
- Subjects: Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10538 , http://hdl.handle.net/10948/1003 , http://hdl.handle.net/10948/d1012890 , Photovoltaic cells , Solar cells , Photovoltaic power systems , Photovoltaic power generation
- Description: In order to investigate the influence of parasitic resistances, saturation current and diode ideality factor on the performance of photovoltaic devices, parameter extraction routines employing the standard iteration (SI) method and the particle swarm optimization (PSO) method were developed to extract the series resistance, shunt resistance, saturation current and ideality factor from the I-V characteristics of solar cells and PV modules. The well-known one- and two-diode models were used to describe the behavior of the I-V curve and the parameters of the models were determined by approximation and iteration techniques. The SI and the PSO extraction programmes were used to assess the suitability of the one- and the two-diode solar cell models in describing the I-V characteristics of mono- and multicrystalline silicon solar cells, CISS- and CIGSS-based solar cells. This exercise revealed that the two-diode model provides more information regarding the different processes involved in solar cell operation. Between the two methods developed, the PSO method is faster, yielded fitted curves with lower standard deviation of residuals and, therefore, was the preferred extraction method. The PSO method was then used to extract the device parameters of CISS-based solar cells with the CISS layer selenized under different selenization process conditions and CIGSS-based solar cells with varying i-ZnO layer thickness. For the CISS-based solar cells, the detrimental effect of parasitic resistances on device performance increased when the temperature and duration of the selenization process was increased. For the CIGSS-based devices, photogeneration improved with increasing i-ZnO layer thickness. At high forward bias, bulk recombination and/or tunneling-assisted recombination were the dominant processes affecting the I-V characteristics of the devices. v Lastly, device and performance parameters of mono-, multicrystalline silicon and CIS modules derived from I-V characteristics obtained under dark and illuminated conditions were analyzed considering the effects of temperature on the performance of the devices. Results showed that the effects of parasitic resistances are greater under illumination and, under outdoor conditions, the values further declined due to increasing temperature. The saturation current and ideality factor also increased under outdoor conditions which suggest increased recombination and, coupled with the adverse effects of parasitic resistances, these factors result in lower FF and lower maximum power point. Analysis performed on crystalline silicon and thin film devices utilized in this study revealed that parameter extraction from I-V characteristics of photovoltaic devices and, in particular, the implementation of PSO in solar cell device parameter extraction developed in this work is a useful characterization technique.
- Full Text:
- Date Issued: 2009
On the characterization of photovoltaic devices for concentrator purposes
- Authors: Vorster, Frederick Jacobus
- Date: 2007
- Subjects: Photovoltaic cells , Image processing , Solar cells
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10530 , http://hdl.handle.net/10948/639 , Photovoltaic cells , Image processing , Solar cells
- Description: This study originated from an evaluation of the performance of a commercially available high concentration point focus concentrator PV system. The effect of module design flaws was studied by using current-voltage (I-V) curves obtained from each module in the array. The position of reverse bias steps revealed the severity of mismatch in a string of series-connected cells. By understanding the effects of the various types of mismatch, power losses and damage to the solar cells resulting from hot spot formation can be minimized and several recommendations for improving the basic performance of similar systems were made. Concern over the extent and type of defect failure of the concentrator photovoltaic (CPV) cells prompted an investigation into the use of a light beam induced current (LBIC) technique to investigate the spatial distribution of defects. An overview of current and developing LBIC techniques revealed that the original standard LBIC techniques have found widespread application, and that far-reaching and important developments of the technique have taken place over the years. These developments are driven by natural progression as well as the availability of newly developed advanced measurement equipment. Several techniques such as Lock-in hermography and the use of infrared cameras have developed as complementary techniques to advanced LBIC techniques. As an accurate contactless evaluation tool that is able to image spatially distributed defects in cell material, the basis of this method seemed promising for the evaluation of concentrator cells.
- Full Text:
- Date Issued: 2007
- Authors: Vorster, Frederick Jacobus
- Date: 2007
- Subjects: Photovoltaic cells , Image processing , Solar cells
- Language: English
- Type: Thesis , Doctoral , PhD
- Identifier: vital:10530 , http://hdl.handle.net/10948/639 , Photovoltaic cells , Image processing , Solar cells
- Description: This study originated from an evaluation of the performance of a commercially available high concentration point focus concentrator PV system. The effect of module design flaws was studied by using current-voltage (I-V) curves obtained from each module in the array. The position of reverse bias steps revealed the severity of mismatch in a string of series-connected cells. By understanding the effects of the various types of mismatch, power losses and damage to the solar cells resulting from hot spot formation can be minimized and several recommendations for improving the basic performance of similar systems were made. Concern over the extent and type of defect failure of the concentrator photovoltaic (CPV) cells prompted an investigation into the use of a light beam induced current (LBIC) technique to investigate the spatial distribution of defects. An overview of current and developing LBIC techniques revealed that the original standard LBIC techniques have found widespread application, and that far-reaching and important developments of the technique have taken place over the years. These developments are driven by natural progression as well as the availability of newly developed advanced measurement equipment. Several techniques such as Lock-in hermography and the use of infrared cameras have developed as complementary techniques to advanced LBIC techniques. As an accurate contactless evaluation tool that is able to image spatially distributed defects in cell material, the basis of this method seemed promising for the evaluation of concentrator cells.
- Full Text:
- Date Issued: 2007
- «
- ‹
- 1
- ›
- »